Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

Solar Energy Materials and Solar Cells

Volumn 92, Issue 10, 2008, Pages 1217-1223

  Funde, A M ^a   Bakr, Nabeel Ali ^a   Kamble, D K ^a   Hawaldar, R R ^b   Amalnerkar, D P ^b   Jadkar, S R ^a  

^a UNIVERSITY OF PUNE   (India)

^b CENTRE FOR MATERIALS FOR ELECTRONICS TECHNOLOGY C MET   (India)

Author keywords

Chemical vapour deposition; Fourier transform infrared spectroscopy; Hydrogenated nanocrystalline silicon; Raman spectra; Thin films

Indexed keywords

CHEMICAL PROPERTIES; HYDROGEN; HYDROGENATION; HYDROGENOLYSIS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE; SILICON; SOLIDS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

CHEMICAL VAPOUR DEPOSITION; ELECTRICAL AND OPTICAL PROPERTIES; HYDROGEN DILUTION; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H);

NANOCRYSTALLINE SILICON;

EID: 47249132797     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.04.012     Document Type: Article

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