Hydrogenated nanocrystalline silicon thin film prepared by RF-PECVD at high pressure

Journal of Non-Crystalline Solids

Volumn 356, Issue 44-49, 2010, Pages 2552-2556

  Li, Wei ^a,b   Xia, Donglin ^a,b   Wang, Huifang ^a,b   Zhao, Xiujian ^a,b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Glass substrate; High pressure; Nc Si:H; RF PECVD; Thin film

Indexed keywords

CRYSTALLINE VOLUME FRACTION; CRYSTALLINITIES; DEPOSITION PARAMETERS; DEPOSITION PRESSURES; FIELD EMISSION ELECTRON MICROSCOPY; FILM CHARACTERIZATIONS; FLOAT GLASS SUBSTRATES; FLOWRATE RATIO; GLASS SUBSTRATES; HIGH PRESSURE; HYDROGEN DILUTION RATIO; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); HYDROGENATED NANOCRYSTALLINE SILICON THIN FILM; NC-SI:H; RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; RAMAN SPECTRA; RAMAN SPECTRUM; RF-PECVD; RF-POWER; WORKING PRESSURES;

DEPOSITION; FIELD EMISSION; GLASS; HYDROGENATION; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78349305125     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.07.064     Document Type: Conference Paper

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