Low-voltage antimony-doped SnO 2 nanowire transparent transistors gated by microporous SiO 2-based proton conductors

Chinese Physics B

Volumn 21, Issue 8, 2012, Pages

  Xuan, Rui Jie ^a   Liu, Hui Xuan ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

electric double layer; nanowire transistors; proton conductor; solid electrolytes

Indexed keywords

BOTTOM ELECTRODES; ELECTRIC CHARACTERISTICS; ELECTRIC DOUBLE LAYER; FIELD-EFFECT MOBILITIES; GATE CAPACITANCE; GATE VOLTAGE SWING; GLASS SUBSTRATES; LOW-VOLTAGE; MICROPOROUS; MOBILE IONS; NANOSCALE SENSORS; NANOWIRE TRANSISTORS; OPERATION VOLTAGE; PROTON CONDUCTORS; ROOM TEMPERATURE; SUBTHRESHOLD;

FIELD EFFECT TRANSISTORS; MICROPOROSITY; NANOWIRES; SOLID ELECTROLYTES; SUBSTRATES;

TRANSISTORS;

EID: 84864679407     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/8/088104     Document Type: Article

References (22)

1. Law M, Greene L E, Johnson J C, Saykally R and Yang P D 2005 Nat. Mater. 4 455 (Pubitemid 40774050)
2. EricN D, Wan Q, Guo W, Chen Y B, Pan X Q and Lu W 2007 Nano Lett. 7 2463 (Pubitemid 47310146)
3. Zhong Z H, Wang D L, Cui Y, Bockrath M W and Lieber C M 2003 Science 302 1377 (Pubitemid 37452175)
4. Kolmakov A, Zhang Y X, Cheng G S and Moskovits M 2003 Adv. Mater. 5 997
5. Samson S and Fonstad C G 1973 J. Appl. Phys. 44 4618
6. Wang Z L 2003 Adv. Mater. 15 432
7. Comini E, Faglia G, Sberveglieri G, Pan Z W and Wang Z L 2002 Appl. Phys. Lett. 81 1869
8. Li Q H, Chen Y L, Wan Q and Wang T H 2004 Appl. Phys. Lett. 85 1805
9. Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 1594
10. Li M, Zhang H Y, Guo C X, Xu J B, Fu X J and Chen P F 2009 Chin. Phys. B 18 5020
11. Dattoli E N, Kim K H, Fung W Y, Choi S Y and Lu W 2009 IEEE Electron Devices Lett. 30 730
12. Kelley T W, Baude P F, Gerlach C, Ender D E, Muyres D, Haase M A, Vogel D E and Theiss S D 2004 Chem. Mater. 16 4413
13. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590 (Pubitemid 40448713)
14. Kim C S, Jo S J, Lee S W, Kim W J, Baik H K, Lee S J, Hwang D K and Im S 2006 Appl. Phys. Lett. 88 243515
15. Lu A X, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
16. Sun J, Jiang J, Lu A X and Wan Q 2010 J. Phys. D: Appl. Phys. 43 295103
17. Sun J, Tang Q X, Lu A X, Jiang X J and Wan Q 2009 Nano Technol. 20 255202
18. Yan F, Migliorato P, Hong Y, Rana V, Ishihara R, Hiroshima Y, Abe D, Inoue S and Shimoda T 2005 Appl. Phys. Lett. 86 253504 (Pubitemid 41244103)
19. Godet J and Pasquarello A 2006 Phys. Rev. Lett. 97 155901 (Pubitemid 44574349)
20. Lee J, Kaake L G, Cho J H, Zhu X Y, Lodge T P and Frisbie C D 2009 J. Phys. Chem. C 113 8972
21. Debye P 1936 Chem. Rev. 19 171
22. Hoffman R L 2004 J. Appl. Phys. 95 5813