Microporous SiO2-based solid electrolyte with improved polarization response for 0.8 v transparent thin-film transistors

Journal of Physics D: Applied Physics

Volumn 43, Issue 29, 2010, Pages

  Sun, Jia ^a,b   Jiang, Jie ^a   Lu, Aixia ^a   Wan, Qing ^a,b  

^a HUNAN UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; DIPOLE RELAXATION; ELECTRIC DOUBLE LAYER; FIELD-EFFECT MOBILITIES; IONIC RELAXATION; LOW TEMPERATURES; MICROPOROUS; ON/OFF RATIO; POLARIZATION RESPONSE; PORTABLE ELECTRONICS; SPECIFIC CAPACITANCE; SUBTHRESHOLD SWING; TRANSPARENT THIN FILM TRANSISTOR; ULTRA-LOW-VOLTAGE;

MICROPOROSITY; POLARIZATION; SILICON COMPOUNDS; SOLID ELECTROLYTES; ZINC;

THIN FILM TRANSISTORS;

EID: 77954462649     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/29/295103     Document Type: Article

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