Characterization of ZnO nanowire field-effect transistors exposed to ultraviolet radiation

Chinese Physics B

Volumn 18, Issue 11, 2009, Pages 5020-5023

  Li, Ming ^a   Zhang, Hai Ying ^a   Guo, Chang Xin ^b   Xu, Jing Bo ^a   Fu, Xiao Jun ^a   Chen, Pu Feng ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Field effect transistor; Suspended; Ultraviolet radiation; ZnO nanowire

Indexed keywords

CHANNEL RESISTIVITY; DC PERFORMANCE; DEVICE APPLICATION; FIELD-EFFECT MOBILITIES; INTRINSIC PROPERTY; IRRADIATION TIME; NANOWIRE FET; RADIATION INTENSITY; SATURATION DRAIN CURRENT; ZNO NANOWIRES;

DRAIN CURRENT; ELECTRIC WIRE; IRRADIATION; MESFET DEVICES; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SOLAR RADIATION; ULTRAVIOLET RADIATION; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 70449701551     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/11/067     Document Type: Article

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