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Chinese Physics B

Volumn 21, Issue 8, 2012, Pages

Strain relaxation and optical properties of etched In 0.19Ga 0.81N nanorod arrays on the GaN template

(7) Zhang, Dong Yan a,b Zheng, Xin He a Li, Xue Fei a Wu, Yuan Yuan a,b Wang, Hui a Wang, Jian Feng a Yang, Hui a

a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

InGaN GaN nanorod arrays; photoluminescence; recombination; strain relaxation

Indexed keywords

CRYSTALLOGRAPHIC PLANE; GAN TEMPLATE; HIGH DENSITY; INGAN/GAN; LARGE SURFACE AREA; LIGHT-EXTRACTION EFFICIENCY; LOW TEMPERATURES; NANOMASKS; NANOROD ARRAYS; PHOTOLUMINESCENCE EMISSION; QUENCHING EFFECT; RECIPROCAL SPACE MAPPING; RECOMBINATION; RED SHIFT; S-SHAPED; SAPPHIRE SUBSTRATES; SELF-ASSEMBLED;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SAPPHIRE; STRAIN RELAXATION;

NANORODS;

EID: 84864670322 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/21/8/087802 Document Type: Article

Times cited : (8)

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