Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy

Wuli Xuebao/Acta Physica Sinica

Volumn 54, Issue 11, 2005, Pages 5344-5349

  Xu, Geng Zhao ^a   Liang, Hu ^b   Bai, Yong Qiang ^a   Lau, Kei May ^b   Zhu, Xing ^a,b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Cryogenics; InGaN GaN multiple quantum wells; Light emitting diodes; Scanning near field optical microscopy

Indexed keywords

EID: 27944496918     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (24)