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Applied Physics Letters

Volumn 94, Issue 20, 2009, Pages

P-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance

(8) Seo, H W a Tu, L W b Lin, Y T b Ho, C Y b Chen, Q Y b Yuan, L a Norman, D P a Ho, N J b

a University of Arkansas at Little Rock ^* (United States)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; GAN LAYERS; GAN NANORODS; LATERAL GROWTH; LUMINESCENCE PROPERTIES; POSTGROWTH ANNEALING; SI(111) SUBSTRATE; SURFACE LAYERS; VERTICAL INTEGRATION;

GALLIUM NITRIDE; LUMINESCENCE; NANORODS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 65949113611 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3129191 Document Type: Article

Times cited : (8)

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