Investigation of the presence of metal droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation

Applied Surface Science

Volumn 258, Issue 24, 2012, Pages 9997-10001

  Terziyska, Penka T ^a   Butcher, Kenneth Scott Alexander ^a,b   Alexandrov, Dimiter ^a,b  

^a LAKEHEAD UNIVERSITY   (Canada)

^b Meaglow Ltd   (Canada)

Author keywords

AFM; Force distance curves; GaN; InN; Phase contrast

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHLORINE COMPOUNDS; DROPS; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALS; NANOINDENTATION;

COMPLIANT MATERIALS; DROPLET SURFACES; FORCE SPECTROSCOPY; FORCE-DISTANCE CURVES; GAN EPITAXIAL GROWTH; MATERIAL COMPOSITIONS; PHASE CONTRASTS; PHASE-CONTRAST IMAGE;

INDIUM COMPOUNDS;

EID: 84864646521     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.06.062     Document Type: Article

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