InN grown by migration enhanced afterglow (MEAglow)

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 41-44

  Butcher, Kenneth Scott A ^a,b   Alexandrov, Dimiter ^a,b   Terziyska, Penka ^a   Georgiev, Vasil ^a   Georgieva, Dimka ^a   Binsted, Peter W ^a  

^a LAKEHEAD UNIVERSITY   (Canada)

^b Meaglow Ltd   (Canada)

Author keywords

characterisation; hollow cathode; indium nitride; migration enhanced epitaxy

Indexed keywords

CHARACTERISATION; CHEMICAL VAPOUR DEPOSITION; FILM DEPOSITION; FULL WIDTH HALF MAXIMUM; HOLLOW CATHODE; HOLLOW CATHODES; INDIUM NITRIDE; INITIAL FILM; INN THIN FILMS; LOW-PRESSURE CONDITIONS; MIGRATION ENHANCED EPITAXY; ROOT MEAN SQUARE (RMS) SURFACE ROUGHNESS; SAPPHIRE SUBSTRATES; STEP-FLOW GROWTH;

ATOMIC FORCE MICROSCOPY; CATHODES; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; INDIUM; NITRIDES; NITROGEN PLASMA; PLASMA DEPOSITION; SAPPHIRE; SURFACE ROUGHNESS; X RAY DIFFRACTION;

FILM GROWTH;

EID: 84055177070     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100102     Document Type: Article

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