Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

Microsystem Technologies

Volumn 18, Issue 7-8, 2012, Pages 945-953

  Pabst, Oliver ^a,b   Schiffer, Michael ^c   Obermeier, Ernst ^d   Tekin, Tolga ^d   Lang, Klaus Dieter ^d   Ngo, Ha Duong ^d  

^a FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c EPCOS AG   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CUBIC SILICON CARBIDE; DEPOSITION CONDITIONS; ELECTRONIC DEVICE; HARSH ENVIRONMENT; MECHANICAL DEVICE; MEMBRANE DEFLECTIONS; MEMSDEVICES; OPERATING TEMPERATURE; POLYCRYSTALLINE; POLYCRYSTALLINE SAMPLES; SIC FILMS; SINGLE CRYSTAL SAMPLES; YOUNG'S MODULUS;

ELASTIC MODULI; ELECTROMECHANICAL DEVICES; MEMS; RESIDUAL STRESSES; SILICON WAFERS; SINGLE CRYSTALS; TEMPERATURE; THERMAL CONDUCTIVITY;

SILICON CARBIDE;

EID: 84864584862     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-011-1419-3     Document Type: Conference Paper

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