Role of hydrogen in dry etching of silicon carbide using inductively and capacitively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3817-3821

  Mikami, Hidenori ^a   Hatayama, Tomoaki ^a   Yano, Hiroshi ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

CCP; Etching; Fluoride; ICP; SiC; Surface roughness

Indexed keywords

CAPACITANCE; ETCHING; HYDROGEN; OPTIMIZATION; OXYGEN; PLASMAS; SURFACE ROUGHNESS;

CCP; FLUORIDE; ICP;

SILICON CARBIDE;

EID: 23944479366     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3817     Document Type: Article

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