About RC-like contacts in deep level transient spectroscopy and Cu(In,Ga)Se 2 solar cells

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 5, 2012, Pages 588-594

  Lauwaert, J ^a   Callens, L ^a   Khelifi, S ^a   Decock, K ^a   Burgelman, M ^a   Chirila, A ^b   Pianezzi, F ^b   Buecheler, S ^b   Tiwari, A N ^b   Vrielinck, H ^a  

^a GHENT UNIVERSITY   (Belgium)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

CIGS; DLTS

Indexed keywords

APPLIED BIAS; APPLIED PHYSICS; BACK CONTACT; CIGS; CU(IN , GA)SE; DEEP DEFECTS; DEFECT LEVELS; DETAILED BALANCE EQUATION; FREE CARRIER CONCENTRATION; FREE CARRIERS; LOW TEMPERATURES; P-N DIODE; SCHOTTKY; SPECTRAL COMPONENTS; THIN FILM SOLAR CELLS;

DEFECTS; GALLIUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DIODES; SOLAR CELLS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 84864467775     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2166     Document Type: Article

References (17)

1. 2 thin-film solar cells beyond 20%. Progress in Photovoltaics: Research and Applications 2011; n/a.
2. 2 thin film solar cells. Journal of Applied Physics 2010; 034509.
3. Igalson M, Zabierowski P, Przado D, Urbaniak A, Edoff M, Shafarman WN,. Understanding defect-related issues limiting efficiency of CIGS solar cells. Solar energy materials and solar cells 2009; 1290.
4. Igalson M, Zabierowski P,. Transient capacitance spectroscopy of defect levels in CIGS devices. Thin Solid Films 2000; 361: 371.
5. Reislöhner U, Metzner H, Ronning C,. Hopping conduction observed in thermal admittance spectroscopy. Physical Review Letters 2010; 226403.
6. 2 based heterojunctions. Thin Solid Films 2011; 519 (21): 7485-7488.
7. Heath JT, Cohen JD, Shafarman WN,. Distinguishing metastable changes in bulk CIGS defect densities from interface effects. Thin Solid Films 2003; 431-432: 426-430.
8. Yelon A, Movaghar B, Crandall RS,. Multi-excitation entropy: its role in thermodynamics and kinetics. Reports on Progress in Physics 2006; 69: 1145-1194.
9. Weiss S, Kassing R,. Deep level transient Fourier SPectroscopy (DLTFS)-A technique for the analysis of deep level properties. Solid State Electronics 1988; 1733.
10. Chirilǎ A, Guettler D, Bremaud D, Buecheler S, Verma R, Seyrling S, Nishiwaki S, Haenni S, Bilger G, Tiwari AN,. Proc. 34th IEEE Photovoltaic Specialists Conference, Philadelphia, USA, June 7-12, 2009; 812-816.
11. Buecheler S, Pianezzi F, Fella C, Chirilǎ A, Decock K, Burgelman M, Tiwari AN,. Interface formation between CuIn(1-x)Ga(x)Se(2) absorber and In(2)S(3) buffer layer deposited by ultrasonic spray pyrolysis. Thin Solid Films 2011; 519: 7560-7563.
12. Lang DV,. Fast capacitance transient apparatus-application to ZNO to O centers in gap paranomal junctions. Journal of Applied Physics 1974; 3023.
13. Lauwaert J, Khelifi S, Decock K, Burgelman M, Vrielinck H,. Signature of a back contact barrier in DLTS spectra. Journal of Applied Physics 2011; 063721.
14. Blood P, Orton JW,. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States. Academic Press: London, 1992.
15. Burgelman M, Nollet P, Degrave S,. Modelling polycrystalline semiconductor solar cells. Thin Solid Films 2000; 361-362: 527-532.
16. Lauwaert J, Van Gheluwe J, Clauws P,. An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data. The Review of Scientific Instruments 2008; 093902.
17. Pons D,. Accurate determination of the free carrier capture kinetics if deep traps by space-charge methods. Journal of Applied Physics 1984; 3644.