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Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7485-7488

Systematic study of the complex structure of N1 deep level transient spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions

(5) Zabierowski, P a Stankiewicz, K a Donmez, A b Couzinie Devy, F c Barreau, N c

a WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

b MUGLA SITKI KOCMAN UNIVERSITY (Turkey)

c UNIVERSITÉ DE NANTES (France)

Author keywords

CIGSe; Defects; DLTS; DX center; Metastability

Indexed keywords

CAPACITANCE; COLOR CENTERS; COPPER ALLOYS; DEFECTS; HETEROJUNCTIONS; INDIUM ALLOYS;

CAPACITANCE-VOLTAGE CURVE; CIGSE; COMPLEX STRUCTURE; DX CENTERS; MEASUREMENT CONDITIONS; META-STABLE STATE; METASTABILITIES; RESPONSE CHARACTERISTIC;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 80052146816 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.083 Document Type: Conference Paper

Times cited : (14)

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