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Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7560-7563

Interface formation between CuIn1 - XGaxSe 2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis

(7) Buecheler, S a Pianezzi, F a Fella, C a Chirila, A a Decock, K b Burgelman, M b Tiwari, A N a

a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

b GHENT UNIVERSITY (Belgium)

Author keywords

Band alignment; Buffer layer; CIGS; Diode quality; In2S3; Interface; Solar cells; Spray pyrolysis

Indexed keywords

BAND ALIGNMENTS; BAND GAP WIDENING; CIGS; CIGS SOLAR CELLS; COPPER DEPLETION; DEVICE ANNEALING; INTERFACE FORMATION; PHOTOVOLTAIC PROPERTY; SURFACE REGION; ULTRASONIC SPRAY PYROLYSIS;

ACTIVATION ENERGY; ALIGNMENT; BUFFER LAYERS; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR POWER GENERATION; ULTRASONICS;

SPRAY PYROLYSIS;

EID: 80052156604 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.370 Document Type: Conference Paper

Times cited : (15)

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