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Volumn , Issue , 2009, Pages 000812-000816

CIGS solar cells grown by a three-stage process with different evaporation rates

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ANTIREFLECTION; CIGS SOLAR CELLS; CU(IN , GA)SE; EVAPORATION PROCESS; EVAPORATION RATE; FLEXIBLE POLYIMIDE; GLASS SUBSTRATES; HIGH DEPOSITION RATES; HIGH POTENTIAL; LOW COSTS; LOW SUBSTRATE TEMPERATURE; PHOTOVOLTAIC ENERGY CONVERSION; PHOTOVOLTAIC PROPERTY; POLYCRYSTALLINE; THREE-STAGE PROCESS;

EID: 77951577496     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411161     Document Type: Conference Paper
Times cited : (19)

References (9)
  • 8
    • 0033340001 scopus 로고    scopus 로고
    • Preparation of CIGS Thin Films from In-Ga-Se Precursors for High-Efficiency Solar Cells
    • S. Nishiwaki, T. Satoh, S. Hayashi, Y. Hashimoto, T. Negami, and T. Wada, "Preparation of CIGS Thin Films from In-Ga-Se Precursors for High-Efficiency Solar Cells", J. Mater. Res, 14, 1999, pp. 4514-4520
    • (1999) J. Mater. Res , vol.14 , pp. 4514-4520
    • Nishiwaki, S.1    Satoh, T.2    Hayashi, S.3    Hashimoto, Y.4    Negami, T.5    Wada, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.