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Volumn 361, Issue , 2000, Pages 371-377

Transient capacitance spectroscopy of defect levels in CIGS devices

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER COMPOUNDS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; LAPLACE TRANSFORMS; LIGHTING; PHASE TRANSITIONS; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; ZINC OXIDE;

EID: 0033906820     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00822-6     Document Type: Article
Times cited : (48)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.