Self-heating-induced negative bias temperature instability in poly-Si TFTs under dynamic stress

Electrochemical and Solid-State Letters

Volumn 11, Issue 8, 2008, Pages

  Weng, Chi Feng ^a   Chang, Ting Chang ^a,b   Hsieh, Han Po ^a   Chen, Shih Ching ^a   Hsu, Wei Che ^a   Kuo, Wang Chuang ^a   Young, Tai Fa ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HEATING; HYDROGEN; MECHANICS; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; POLYSILICON; SILICON; STRESSES; SULFATE MINERALS; THIN FILM TRANSISTORS;

AC STRESS; BIAS-TEMPERATURE INSTABILITY (BTI); CHANNEL TEMPERATURE; DRAIN VOLTAGES; DYNAMIC BIASING; DYNAMIC STRESSING; ELECTRICAL CHARACTERISTICS; ELECTROCHEMICAL SOCIETY (ECS); FIXED CHARGES; GATE OXIDES; GATE VOLTAGES; NEGATIVE BIAS- TEMPERATURE-INSTABILITY (NBTI); POLY-SI TFTS; POLYSILICON THIN FILM TRANSISTOR (TFT); SELF-HEATING; SELF-HEATING EFFECT (SHE); SI H BONDS;

DYNAMICS;

EID: 45249096462     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2928997     Document Type: Article

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