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ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1315-1318

Highly efficient GaN power transistors and integrated circuits with high breakdown voltages

(3) Tanaka, Tsuyoshi a Ueda, Tetsuzo a Ueda, Daisuke a

a PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT DEVICES; ELECTRON VELOCITY; GATE INJECTION; HIGH BREAKDOWN; HIGH BREAKDOWN VOLTAGE; HIGH EFFICIENCY; HIGH-SPEED SWITCHING; MONOLITHIC INTEGRATION; MOTOR DRIVE; ON-STATE RESISTANCE; PARASITIC CAPACITANCE; POWER SWITCHING; POWER TRANSISTORS; SI SUBSTRATES; STATE-OF-THE-ART DEVICES; SWITCHING APPLICATIONS; THERMALLY STABLE;

ELECTRIC BREAKDOWN; ELECTRIC DRIVES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; ION IMPLANTATION; MONOLITHIC INTEGRATED CIRCUITS; POWER ELECTRONICS; SWITCHING; TECHNOLOGY;

GALLIUM ALLOYS;

EID: 78751559619 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ICSICT.2010.5667650 Document Type: Conference Paper

Times cited : (8)

References (7)

1
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- M.Yanagihara, Y.Uemoto, T.Ueda, T.Tanaka, and D.Ueda, ,Physica Status Solidi(a), 206, 1221 (2009).
- (2009) Physica Status Solidi(A) , vol.206 , pp. 1221
- Yanagihara, M.¹ Uemoto, Y.² Ueda, T.³ Tanaka, T.⁴ Ueda, D.⁵

2
- 68349132086
- T.Ueda, T.Tanaka, and D.Ueda, International Journal of High Speed Electronics and Systems, 19, 145 (2009).
- (2009) International Journal of High Speed Electronics and Systems , vol.19 , pp. 145
- Ueda, T.¹ Tanaka, T.² Ueda, D.³

3
- 38149014747
- Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, IEEE Trans. Electron Device, 54, 3393 (2007).
- (2007) IEEE Trans. Electron Device , vol.54 , pp. 3393
- Uemoto, Y.¹ Hikita, M.² Ueno, H.³ Matsuo, H.⁴ Ishida, H.⁵ Yanagihara, M.⁶ Ueda, T.⁷ Tanaka, T.⁸ Ueda, D.⁹

4
- 77956197355
- M.Meneghini, M.Scamperle,M.Pavesi, M.Manfredi, T.Ueda, H.Ishida, T.Tanaka, D.Ueda, G.Meneghesso, and E. Zanoni, Appl. Phys. Lett, 97, 033506 (2010).
- (2010) Appl. Phys. Lett , vol.97 , pp. 033506
- Meneghini, M.¹ Scamperle, M.² Pavesi, M.³ Manfredi, M.⁴ Ueda, T.⁵ Ishida, H.⁶ Tanaka, T.⁷ Ueda, D.⁸ Meneghesso, G.⁹ Zanoni, E.¹⁰

5
- 77956500755
- Baltimore, USA, December
- Y.Uemoto, T.Morita, A.Ikoshi, H.Umeda, H.Matsuo, J.Shimizu, M.Hikita, M.Yanagihara, T.Ueda, T.Ueda, and D.Ueda, IEEE IEDM Tech. Dig., Baltimore, USA, December 2009, p.165.
- (2009) IEEE IEDM Tech. Dig. , pp. 165
- Uemoto, Y.¹ Morita, T.² Ikoshi, A.³ Umeda, H.⁴ Matsuo, H.⁵ Shimizu, J.⁶ Hikita, M.⁷ Yanagihara, M.⁸ Ueda, T.⁹ Ueda, T.¹⁰ Ueda, D.¹¹

6
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- T.Ueda, T.Tanaka, and D.Ueda, Ext. Abst. of 2010 Int. Conf. Solid State Devices and Materials, Tokyo, Japan, September 2010.
- Ext. Abst. of 2010 Int. Conf. Solid State Devices and Materials, Tokyo, Japan, September 2010
- Ueda, T.¹ Tanaka, T.² Ueda, D.³

7
- 78751560042
- H.Umeda, T.Takizawa, Y.Anda, T.Ueda, and T.Tanaka, Ext. Abst. of 2010 Int. Conf. Solid State Devices and Materials, Tokyo, Japan, September 2010.
- Ext. Abst. of 2010 Int. Conf. Solid State Devices and Materials, Tokyo, Japan, September 2010
- Umeda, H.¹ Takizawa, T.² Anda, Y.³ Ueda, T.⁴ Tanaka, T.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.