SCOPUS 정보 검색 플랫폼

Organic Electronics

Volumn 13, Issue 1, 2012, Pages 147-152

The operational mechanism of ferroelectric-driven organic resistive switches

(4) Kemerink, Martijn a Asadi, Kamal b,d Blom, Paul W M b,c De Leeuw, Dago M b,d

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b UNIVERSITY OF GRONINGEN (Netherlands)

c HOLST CENTRE (Netherlands)

d PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

Charge transport; Data storage; Ferroelectric nanostructures; Organic semiconductors; Thin films

Indexed keywords

CHARGE TRANSFER; COMPUTER CIRCUITS; DIGITAL STORAGE; FERROELECTRICITY; SEMICONDUCTING ORGANIC COMPOUNDS; SWITCHES; THIN FILMS;

DATA STORAGE; EXPONENTIAL DEPENDENCE; FERROELECTRIC NANOSTRUCTURES; INFORMATION DENSITY; METALLIC ELECTRODES; OPERATIONAL MECHANISM; SPACE-CHARGE LIMITED; SWITCHING MECHANISM;

FERROELECTRIC FILMS;

EID: 82055194184 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2011.10.013 Document Type: Article

Times cited : (37)

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