Fabrication and characterization of ferroelectric poly(vinylidene fluoride-tetrafluoroethylene) gate field-effect transistor memories

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Watanabe, Tomohiro ^a   Miyashita, Hiroyuki ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC GATE; GATE FIELD; MEMORY RETENTION; ON/OFF RATIO; PENTACENES; POLING TREATMENT; TETRAFLUOROETHYLENE; VINYLIDENE FLUORIDE;

CARRIER MOBILITY; DRAIN CURRENT; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FILM PREPARATION; MESFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS; VACUUM EVAPORATION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77952720330     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DD14     Document Type: Article

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