Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Wang, W ^a   Leung, K K ^a   Fong, W K ^a   Wang, S F ^a   Hui, Y Y ^a   Lau, S P ^a   Chen, Z ^b   Shi, L J ^b   Cao, C B ^b   Surya, C ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; BAND SIMULATION; CO-EVAPORATION TECHNIQUES; CU-DOPING; HIGH QUALITY; HITACHI; LAYERED STRUCTURES; LOCALIZED STATE; LOW CONCENTRATIONS; OPTOELECTRONIC PROPERTIES; P-TYPE DOPANT; ROCKING CURVES; SNS FILMS; SNS THIN FILMS; STRUCTURAL DEFECT; SYSTEMATIC INVESTIGATIONS; VAN DER WAALS EPITAXY;

BUFFER LAYERS; ENERGY GAP; EPITAXIAL GROWTH; GRAPHENE; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SEMICONDUCTOR DOPING; THIN FILMS; TIN; VAN DER WAALS FORCES;

COPPER;

EID: 84864263884     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4709732     Document Type: Article

References (45)

1. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer MoS(2) transistors., Nat. Nanotechnol. 6 (3), 147-150 (2011). 10.1038/nnano.2010.279
2. R. L. Withers and J. A. Wilson, An examination of the formation and characteristics of charge-density waves in inorganic materials with special reference to the two-dimensional and one-dimensional transition-metal chalcogenides., J. Phys. C 19 (25), 4809-4845 (1986). 10.1088/0022-3719/19/25/ 005
3. A. Ayari, E. Cobas, O. Ogundadegbe, and M. S. Fuhrer, Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides., J. Appl. Phys. 101 (1), 014507 (2007). 10.1063/1.2407388
4. V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis, and E. Bucher, High-mobility field-effect transistors based on transition metal dichalcogenides., Appl. Phys. Lett. 84 (17), 3301-3303 (2004). 10.1063/1.1723695
5. R. Spah, U. Elrod, M. Luxsteiner, E. Bucher, and S. Wagner, Pn junctions in tungsten diselenide., Appl. Phys. Lett. 43 (1), 79-81 (1983). 10.1063/1.94128
6. R. Spah, M. Luxsteiner, M. Obergfell, E. Bucher, and S. Wagner, N-Mose2P-Wse2 heterojunctions., Appl. Phys. Lett. 47 (8), 871-873 (1985). 10.1063/1.95960
7. D. Avellaneda, M. T. S. Nair, and P. K. Nair, Photovoltaic structures using chemically deposited tin sulfide thin films., Thin Solid Films 517 (7), 2500-2502 (2009). 10.1016/j.tsf.2008.11.043
8. B. Ghosh, M. Das, R. Banerjee, and S. Das, Fabrication of vacuum-evaporated SnSCdS heterojunction for PV applications., Sol. Energy Mater. Sol. Cells 92 (9), 1099-1104 (2008). 10.1016/j.solmat.2008.03.016
9. A. Sanchez-Juarez, A. Tiburcio-Silver, and A. Ortiz, Fabrication of SnS(2)SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition., Thin Solid Films 480, 452-456 (2005). 10.1016/j.tsf.2004.11.012
10. D. Guay, W. M. R. Divigalpitiya, D. Belanger, and X. H. Feng, Chemical bonding in restacked single-layer Mos(2) by x-ray-absorption spectroscopy., Chem. Mater. 6 (5), 614-619 (1994). 10.1021/cm00041a010
11. P. Johari and V. B. Shenoy, Tunable dielectric properties of transition metal dichalcogenides., Acs Nano 5 (7), 5903-5908 (2011). 10.1021/nn201698t
12. A. Koma, K. Sunouchi, and T. Miyajima, Fabrication of ultrathin heterostructures with vanderwaals epitaxy., J. Vac. Sci. Technol. B 3 (2), 724-724 (1985). 10.1116/1.583125
13. A. Koma, Vanderwaals epitaxy-a new epitaxial-growth method for a highly lattice-mismatched system., Thin Solid Films 216 (1), 72-76 (1992). 10.1016/0040-6090(92)90872-9
14. T. Ueno, H. Yamamoto, K. Saiki, and A. Koma, Van der Waals epitaxy of metal dihalide., Appl. Surf. Sci. 113, 33-37 (1997). 10.1016/S0169-4332(96) 00770-2
15. O. Lang, R. Schlaf, Y. Tomm, C. Pettenkofer, and W. Jaegermann, Single-crystalline GaseWse2 heterointerfaces grown by Van-Der-Waals epitaxy. 1. Growth-conditions., J. Appl. Phys. 75 (12), 7805-7813 (1994). 10.1063/1.356562
16. O. Lang, Y. Tomm, R. Schlaf, C. Pettenkofer, and W. Jaegermann, Single-crystalline GaseWse2 heterointerfaces grown by Van-Der-Waals epitaxy. 2. Junction characterization., J. Appl. Phys. 75 (12), 7814-7820 (1994). 10.1063/1.356563
17. 2-approaching the Schottky limit., Phys. Rev. B 42 (12), 7487-7496 (1990). 10.1103/PhysRevB.42.7487
18. L. Sugiura, Dislocation motion in GaN light-emitting devices and its effect on device lifetime., J. Appl. Phys. 81 (4), 1633-1638 (1997). 10.1063/1.364018
19. W. M. Du, D. H. Deng, Z. T. Han, W. Xiao, C. Bian, and X. F. Qian, Hexagonal tin disulfide nanoplatelets: A new photocatalyst driven by solar light., Cryst. Eng. Comm. 13 (6), 2071-2076 (2011). 10.1039/C0CE00596G
20. N. G. Deshpande, A. A. Sagade, Y. G. Gudage, C. D. Lokhande, and R. Sharma, Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique., J. Alloy Compd. 436 (1-2), 421-426 (2007). 10.1016/j.jallcom.2006.12.108
21. H. Noguchi, A. Setiyadi, H. Tanamura, T. Nagatomo, and O. Omoto, Characterization of vacuum-evaporated tin sulfide film for solar-cell materials., Sol. Energy Mater. Sol. Cells 35 (1-4), 325-331 (1994). 10.1016/0927-0248(94)90158-9
22. K. T. R. Reddy, N. K. Reddy, and R. W. Miles, Photovoltaic properties of SnS based solar cells., Sol. Energy Mater. Sol. Cells 90 (18-19), 3041-3046 (2006). 10.1016/j.solmat.2006.06.012
23. M. Ristov, G. Sinadinovski, M. Mitreski, and M. Ristova, Photovoltaic cells based on chemically deposited p-type SnS., Sol. Energy Mater. Sol. Cells 69 (1), 17-24 (2001). 10.1016/S0927-0248(00)00355-X
24. D. B. Mitzi, M. Copel, and S. J. Chey, Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor., Adv. Mater. 17 (10), 1285 (2005). 10.1002/adma.200401443
25. D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, and A. Afzali, High-mobility ultrathin semiconducting films prepared by spin coating., Nature 428 (6980), 299-303 (2004). 10.1038/nature02389
26. S. S. Hegde, A. G. Kunjomana, K. A. Chandrasekharan, K. Ramesh, and M. Prashantha, Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique., Physica B 406 (5), 1143-1148 (2011). 10.1016/j.physb.2010.12.068
27. A. Tanusevski and D. Poelman, Optical and photoconductive properties of SnS thin films prepared by electron beam evaporation., Sol. Energy Mater. Sol. Cells 80 (3), 297-303 (2003). 10.1016/j.solmat.2003.06.002
28. N. K. Reddy and K. T. R. Reddy, Growth of polycrystalline SnS films by spray pyrolysis., Thin Solid Films 325 (1-2), 4-6 (1998). 10.1016/S0040-6090(98) 00431-3
29. M. Ichimura, Calculation of band offsets at the CdSSnS heterojunction., Sol. Energy Mater. Sol. Cells 93 (3), 375-378 (2009). 10.1016/j.solmat.2008.11. 008
30. M. Gunasekaran and M. Ichimura, Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited US and Cd1-xZnxS., Sol. Energy Mater. Sol. Cells 91 (9), 774-778 (2007). 10.1016/j.solmat.2006.10. 026
31. K. Hartman, J. L. Johnson, M. I. Bertoni, D. Recht, M. J. Aziz, M. A. Scarpulla, and T. Buonassisi, SnS thin-films by RF sputtering at room temperature., Thin Solid Films 519 (21), 7421-7424 (2011). 10.1016/j.tsf.2010. 12.186
32. A. M. Haleem and M. Ichimura, Experimental determination of band offsets at the SnSCdS and SnSInS(x)O(y) heterojunctions., J. Appl. Phys. 107 (3), 034507 (2010). 10.1063/1.3294619
33. B. Ghosh, M. Das, P. Banerjee, and S. Das, Fabrication of the SnSZnO heterojunction for PV applications using electrodeposited ZnO films., Semicond. Sci. Technol. 24 (2), 025024 (2009). 10.1088/0268-1242/24/2/025024
34. Y. Wang, H. Gong, B. H. Fan, and G. X. Hu, Photovoltaic behavior of nanocrystalline SnSTiO(2)., J. Phys. Chem. C 114 (7), 3256-3259 (2010). 10.1021/jp9075756
35. N. K. Reddy, K. Ramesh, R. Ganesan, K. T. R. Reddy, K. R. Gunasekhar, and E. S. R. Gopal, Synthesis and characterisation of co-evaporated tin sulphide thin films., Appl. Phys. A: Mater. Sci. Process. 83 (1), 133-138 (2006). 10.1007/s00339-005-3475-y
36. S. Boonsalee, R. V. Gudavarthy, E. W. Bohannan, and J. A. Switzer, Epitaxial electrodeposition of tin(II) sulfide nanodisks on single-crystal Au(100)., Chem. Mater. 20 (18), 5737-5742 (2008). 10.1021/cm801502m
37. H. Nozaki, M. Onoda, M. Sekita, K. Kosuda, and T. Wada, Variation of lattice dimensions in epitaxial SnS films on MgO(001)., J. Solid State Chem. 178 (1), 245-252 (2005). 10.1016/j.jssc.2004.11.031
38. W. Albers, C. Haas, and F. Vandermaesen, The preparation and the electrical and optical properties of Sns crystals., J. Phys. Chem. Solids 15 (3-4), 306-310 (1960). 10.1016/0022-3697(60)90253-5
39. 2 thin films., J. Phys. D: Appl. Phys. 33 (9), 1054-1059 (2000). 10.1088/0022-3727/33/9/304
40. X. S. Li, W. W. Cai, J. H. An, S. Kim, J. Nah, D. X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S Ruoff, Large-area synthesis of high-quality and uniform graphene films on copper foils., Science 324 (5932), 1312-1314 (2009). 10.1126/science.1171245
41. K. M. Borysenko, J. T. Mullen, X. Li, Y. G. Semenov, J. M. Zavada, M. B. Nardelli, and K. W. Kim, Electron-phonon interactions in bilayer graphene., Phys. Rev. B 83 (16), 161402(R) (2011). 10.1103/PhysRevB.83.161402
42. H. R. Chandrasekhar, R. G. Humphreys, U. Zwick, and M. Cardona, Ir and raman-spectra of 4-6 compounds Sns and Snse., Phys. Rev. B 15 (4), 2177-2183 (1977). 10.1103/PhysRevB.15.2177
43. P. M. Nikolic, L. Miljkovic, P. Mihajlovic, and B. Lavrencic, Splitting and coupling of lattice modes in layer compound Sns., J. Phys. C Solid State 10 (11), L289-L292 (1977). 10.1088/0022-3719/10/11/003
44. S. A. Zhang and S. Y. Cheng, Thermally evaporated SnS:Cu thin films for solar cells., Micro. Nano Lett. 6 (7), 559-562 (2011). 10.1049/mnl.2011.0121
45. M. Devika, N. K. Reddy, K. Ramesh, K. R. Gunasekhar, E. S. R. Gopal, and K. T. R. Reddy, Low resistive micrometer-thick SnS: Ag films for optoelectronic applications., J. Electrochem. Soc. 153 (8), G727-G733 (2006). 10.1149/1.2204870