Van der Waals epitaxy of metal dihalide

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 33-37

  Ueno, Tetsuji ^a,b   Yamamoto, Hideki ^a,c   Saiki, Koichiro ^a   Koma, Atsushi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

CdI 2; In plane orientation relationship; Layered material (LM); PbI 2; Reflection high energy electron diffraction (RHEED); Van der Waals epitaxy (VDWE)

Indexed keywords

CRYSTAL LATTICES; IODINE COMPOUNDS; LATTICE CONSTANTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; SURFACES; ULTRATHIN FILMS; VAN DER WAALS FORCES;

CADMIUM IODIDE; LATTICE MISMATCH; LEAD IODIDE; VAN DER WAALS EPITAXY;

EPITAXIAL GROWTH;

EID: 0031547306     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00770-2     Document Type: Article

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