Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

Journal of Alloys and Compounds

Volumn 436, Issue 1-2, 2007, Pages 421-426

  Deshpande, N G ^a   Sagade, A A ^a   Gudage, Y G ^a   Lokhande, C D ^b   Sharma, Ramphal ^a  

^a DR BABASAHEB AMBEDKAR MARATHWADA UNIVERSITY   (India)

^b SHIVAJI UNIVERSITY   (India)

Author keywords

Current Voltage measurements; Photoluminescence; SILAR technique; Tin disulfide; X Ray Diffraction

Indexed keywords

DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; REACTION KINETICS; TIN COMPOUNDS; X RAY DIFFRACTION;

CURRENT-VOLTAGE MEASUREMENTS; SILAR TECHNIQUE; TIN DISULFIDE;

THIN FILMS;

EID: 34047243870     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.12.108     Document Type: Article

References (21)

1. Jaing T., and Ozin G.A. J. Mater. Chem. 8 (1998) 1099
2. Patil S.G., and Fredgold R.H. J. Pure Appl. Phys. 4 (1971) 718
3. Said G., and Lee P.A. Phys. Status Solidi A 15 (1973) 99
4. Woulfe P. Philos. Trans. R. Soc. London 61 (1771) 114
5. Polosz B., Steurer W., and Schultz H. Acta Crystallogr. Sec. B 46 (1990) 449
6. Ortiz A., and Lopez S. Semicond. Sci. Technol. 9 (1994) 2130
7. Engleken R.D., Mccloud H.E., Lee C., Slayton M., and Ghoreishi H. J. Electrochem. Soc. 134 (1987) 2696
8. Manasevit H.M., and Simpson W.J. J. Electrochem. Soc. 122 (1975) 444
9. Matsumoto K., and Kaneko S. Thin Solid Films 121 (1984) 227
10. Lokhande C.D. J. Phys. D: Appl. Phys. 23 (1990) 1703
11. Lokhande C.D., Sankapal B.R., Sartale S.D., Pathan H.M., Giersig M., and Ganesan V. Appl. Surf. Sci. 182 (2001) 413
12. Chavhan S.D., Bagul S.V., Ahire R.R., Deshpande N.G., Sagade A.A., Gudage Y.G., and Sharma R. J. Alloys Compd. 436 (2007) 400-406
13. Kale R.B., Sartale S.D., Chougule B.K., and Lokhande C.D. Semicond. Sci. Technol. 19 (2004) 980
14. Chang S.T., Leu I.C., and Hon M.H. J. Alloys Compd. 403 (2005) 335
15. Sankapal B.R., Mane R.S., and Lokhande C.D. Mater. Res. Bull. 35 (2000) 1345
16. JCPDS Card No. 23-0677.
17. Price L.S., Parkin I.P., Hardy A.M.E., and Clark R.J.H. Chem. Mater. 11 (1999) 1792
18. Yang Q., Tang K., Wang C., Zuo J., Zhang D., and Qian Y. Thin Solid Films 436 (2003) 203
19. Gaponendo S.V. Optical Properties of Semiconductors Nanorystals (1998), Cambridge University Press, Cambridge
20. Streetman B.G. Solid State Electronic Devices (1995), Prentice Hall of India Pvt. Ltd., New Delhi
21. Kasap S.O. Electronic Materials and Devices (2003), Tata Mcgraw Hill, New Delhi