Participation of focused ion beam implanted gallium ions in metal-assisted chemical etching of silicon

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  Hildreth, Owen ^a   Rykaczewski, Konrad ^b   Wong, Ching Ping ^a,c  

^a Georgia Institute of Technology   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; FOCUSED ION BEAMS; IONS;

ACCELERATING VOLTAGES; E-BEAM LITHOGRAPHY; ETCH DEPTH; ETCH PROFILE; ETCHING TIME; METAL-ASSISTED CHEMICAL ETCHING; NANO SCALE; PATTERNED CATALYST; PLATINUM CATALYSTS;

ETCHING;

EID: 84864202330     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4732124     Document Type: Article

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