Coupled heterogeneous nanowire-nanoplate planar transistor sensors for giant (>10 V/pH) nernst response

ACS Nano

Volumn 6, Issue 7, 2012, Pages 5972-5979

  Go, Jonghyun ^a   Nair, Pradeep R ^a,d   Reddy, Bobby ^b   Dorvel, Brian ^c   Bashir, Rashid ^b   Alam, Muhammad A ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

field effect transistor; limit of biosensors; nanowire nanoplate; Nernst limit; pH sensor

Indexed keywords

AMPLIFICATION FACTORS; BIAS CONDITIONS; HETEROGENEOUS INTEGRATION; ISFET SENSORS; LOWER LIMITS; NANOWIRE-NANOPLATE; NERNST LIMIT; PH RESPONSE; PLANAR TRANSISTORS; RECENT TRENDS; SENSOR RESPONSE;

BIOSENSORS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); NANOWIRES; PH SENSORS; SILICON;

SENSORS;

NANOMATERIAL; NANOWIRE; QUANTUM DOT;

ARTICLE; ELECTROCHEMICAL ANALYSIS; EQUIPMENT DESIGN; PH; SEMICONDUCTOR;

ELECTROCHEMICAL TECHNIQUES; EQUIPMENT DESIGN; HYDROGEN-ION CONCENTRATION; NANOSTRUCTURES; NANOWIRES; QUANTUM DOTS; TRANSISTORS, ELECTRONIC;

EID: 84864184010     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300874w     Document Type: Article

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