Fabrication and application of silicon nanowire transistor arrays for biomolecular detection

Sensors and Actuators, B: Chemical

Volumn 144, Issue 2, 2010, Pages 354-360

  Vu, X T ^a   GhoshMoulick, R ^a   Eschermann, J F ^a   Stockmann, R ^a   Offenhausser A ^a   Ingebrandt, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Biosensor; Field effect sensors; Nanoimprint lithography; Silicon nanowire transistor arrays

Indexed keywords

ARRAY FABRICATION; BIODETECTION; BIOELECTRONIC APPLICATIONS; BIOMOLECULAR DETECTIONS; BIOMOLECULAR LAYERS; DIFFERENTIAL READOUT; ELECTROCHEMICAL CHARACTERIZATIONS; ELECTROLYTE SOLUTIONS; ELECTRONIC PERFORMANCE; FABRICATION PROCESS; FIELD-EFFECT SENSOR; FIELD-EFFECT SENSORS; GATE CONTROL; HIGHLY INTEGRATED; REFERENCE ELECTRODES; RELIABLE DETECTION; RELIABLE ELECTRONICS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRE TRANSISTOR ARRAYS; SILICON NANOWIRE TRANSISTORS; SILICON NANOWIRES; SINGLE-STRANDED DNA; SMOOTH SURFACE; SOI WAFERS; STANDARD CMOS; SUBTHRESHOLD SLOPE; WET ANISOTROPIC ETCHING;

BIOSENSORS; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; FABRICATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOIMPRINT LITHOGRAPHY; NANOWIRES; WIRE;

SILICON WAFERS;

EID: 75749148829     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.11.048     Document Type: Article

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