Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Go, Jonghyun ^a   Nair, Pradeep R ^a   Reddy Jr , Bobby ^b,c   Dorvel, Brian ^c   Bashir, Rashid ^b,c   Alam, Muhammad A ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOMOLECULE DETECTION; COMPACT MODEL; DESIGN AND OPTIMIZATION; DNA BIOSENSORS; ELECTRONIC SENSING; LOW COSTS; NANO SCALE; PH SENSING; SEMICONDUCTOR INDUSTRY; SIMULATION RESULT;

BIOMOLECULES; BIOSENSORS; COMPUTER SIMULATION; ELECTRON DEVICES; PH EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE;

FIELD EFFECT TRANSISTORS;

EID: 79951818300     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703325     Document Type: Conference Paper

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