Irradiation effects of 6MeV electron on electrical properties of Al/Al 2O 3/n-Si MOS capacitors

Radiation Physics and Chemistry

Volumn 81, Issue 10, 2012, Pages 1600-1605

  Laha, P ^a   Banerjee, I ^a,d   Bajaj, A ^a   Chakraborty, P ^e   Barhai, P K ^a   Dahiwale, S S ^f   Das, A K ^b   Bhoraskar, V N ^c   Kim, D ^f   Mahapatra, S K ^a  

^a BIRLA INSTITUTE OF TECHNOLOGY   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

^c UNIVERSITY OF PUNE   (India)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

^f Korea University   (South Korea)

Author keywords

Al 2O 3; Electron irradiation; Flat band voltage; Interface trap density; Leakage current; MOS device

Indexed keywords

CRYSTALLINITIES; CURRENT MECHANISMS; DEVICE PARAMETERS; DOSE RATE; ELEMENTAL DISTRIBUTION; FLAT-BAND VOLTAGE; FOUR-GROUP; GRAZING INCIDENCE X-RAY DIFFRACTION; INTERFACE TRAP DENSITY; IRRADIATION EFFECT; METAL OXIDE SEMICONDUCTOR; POOLE-FRENKEL; RF-MAGNETRON SPUTTERING; SECOND GROUP;

DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOS CAPACITORS; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY DIFFRACTION;

SEMICONDUCTING SILICON;

ALUMINUM DERIVATIVE; ALUMINUM OXIDE; METAL OXIDE; SILICON DERIVATIVE;

ARTICLE; CALCULATION; CAPACITOR; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTY; ELECTRICITY; ELECTRON; IRRADIATION; MASS SPECTROMETRY; RADIATION DOSE; SEMICONDUCTOR; THICKNESS; X RAY DIFFRACTION;

EID: 84863856005     PISSN: 0969806X     EISSN: 18790895     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2012.04.006     Document Type: Article

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