Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 5, 2006, Pages 335-339

  Bhuvaneswari, H B ^a   Reddy, V Rajagopal ^a   Rao, G Mohan ^b  

^a UNIVERSITY OF MYSORE   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MIM DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; TITANIUM OXIDES; ZIRCONIUM COMPOUNDS;

ELECTRICAL CHARACTERISTIC; LEAKAGE CURRENT DENSITY; ZIRCONIUM NITRIDE;

MOS DEVICES;

EID: 33745014206     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-7466-3     Document Type: Article

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