Total ionizing dose effects in MOS devices for different radiation sources

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Kim, H S ^a   Kim, Yongmin ^a   Noh, S J ^a   Kim, M H ^b  

^a Dankook University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Cosmic ray; Electron; MOSFET; Proton; Stopping power; Total ionizing dose effect

Indexed keywords

EID: 12744251558     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (23)

1. Y. H. Shin, K. W. Min, J. G. Rhee, S. H. Kim, H. S. Kim, S. D. Park, D. K. Sung and S. D. Choi, IEEE Trans. Nucl. Sci. 48, 1586 (1999).
2. Young Hoon Shin, Measurement and Analysis of Space Environment using Low Earth Orbit Satellites, KAIST (2000).
3. B. Klecker, Adv. Space Res. 17, 2 (1996).
4. E. G. Stassinopoulos and James P. Raymond, Proceedings of IEEE 76, 11 (1988).
5. Joseph F. Fennell, Harry C. Koon, Magaret W. Chen and J. Bernard Blake, IEEE Transcations on Plasma Science 28, 6 (2000).
6. J. R. Heirtzler, Journal of Atmospheric and Solar-Terrestrial Physics 64, 1701 (2002).
7. Harald A. Enge, Introduction to Nuclear Physics (Addison-Wesley Publishing Company, 1972).
8. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Device and Circuits (J. Wiley & Sons, New York, 1989), Ch. 3.
9. James R. Schwank, 2002 NSREC Short course notebook, Section III (2002).
10. H. S. Kim, E. H. Kim, S. M. Han and S. J. Noh, Seamulli 47, 157 (2003).
11. H. S. Kim, S. K. Lee and S. J. Noh, Seamulli 47, 430 (2003).
12. Aivars J. Lelis, Steven R. Murrill, Timothy R. Oldham, Dale N. Robertson and Monte Manning, IEEE Trans. Nucl. Sci. 43, 3103 (1996).
13. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, T. L. Meisenheimer and P. S. Winokur, IEEE Trans. Nucl. Sci. 41, 2550 (1994).
14. R. C. Lacoe, J. V. Osborn, D. C. Mayer, S. C. Witczak, S. Brown, R. Robertson and D. R. Hunt, Proceedings of the 2001 6th European Conference on Radiation and Its Effects on Components and Systems, 464 (2001).
15. Martin Denton, Radiation Effects on Electronics Components and Circuits, European Organization for Nuclear Research CERN Training (2000).
16. G. U. Youk, P. S. Khare, R. D. Schrimpf, L. W. Massengill and K. F. Galloway, IEEE Trans. Nucl. Sci. 46, 1830 (1999).
17. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Device and Circuits (J. Wiley & Sons, New York, 1989), Ch. 4.
18. Ashok K. Sharma, Semiconductor Memories (IEEE PRESS, New York, 1997), Ch. 7.
19. J. R. Schwank, M. R. Shaneyfelt, P. Paillet, D. E. Beutler, V. Ferlet-Cavrois, B. L. Draper, R. A. Loemker, P. E. Dodd and F. W. Sexton, IEEE Trans. Nucl. Sci. 48, 2152 (2001).
20. P. Paillet, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, R. L. Jones, O. Flament and E. W. Blackmore, IEEE Trans. Nucl. Sci. 49, 2656 (2002).
21. ICRU Report 37, Stopping Powers for Electrons and Positrons (1984).
22. ICRU Report 49, Stopping Powers and Ranges for Protons and Alpha Particles (1993).
23. T. R. Oldham and F. B. McLean, IEEE Trans. Nucl. Sci. 50, 483 (2003).