InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

Nanotechnology

Volumn 23, Issue 30, 2012, Pages

  Lundskog, A ^a   Palisaitis, J ^a   Hsu, C W ^a   Eriksson, M ^a   Karlsson, K F ^a   Hultman, L ^a   Persson, P O ^a   Forsberg, U ^a   Holtz, P O ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION LINES; GAN PYRAMIDS; HEXAGONAL GAN; INGAN QUANTUM DOTS; MICRO-STRUCTURAL; MICROPHOTOLUMINESCENCE; OPTICAL INVESTIGATION; SYNTHESIS PROCEDURE;

ELECTROMAGNETIC WAVE EMISSION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84863757544     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/30/305708     Document Type: Article

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