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Volumn 52, Issue 8, 2012, Pages 1602-1605

Optimizing the fabrication process for high performance graphene field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BRILLOUIN ZONES; CHANNEL MOBILITY; CONE-SHAPED; CONTACT RESISTIVITIES; DEVICE FABRICATIONS; DIRAC POINT; EMERGING MATERIALS; FABRICATION PROCESS; FIELD-EFFECTIVE MOBILITIES; FILM TRANSFER; GRAPHENE GROWTH; HIGH FREQUENCY DEVICES; INTERFACIAL STATE; K POINTS; MAXIMUM TRANSCONDUCTANCE; ON STATE CURRENT; SATURATION VELOCITY; SOURCE/DRAIN STRUCTURES; STATE OF THE ART; ZERO GATE;

EID: 84863717142     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.036     Document Type: Article
Times cited : (17)

References (15)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.