Scalable synthesis of graphene on patterned Ni and transfer

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3472-3476

  Wang, Yanjie ^a   Miao, Congqin ^a   Huang, Bo Chao ^a   Zhu, Jing ^a   Liu, Wei ^a   Park, Youngju ^a   Xie, Ya Hong ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical vapor deposition (CVD); graphene; transfer; transistors

Indexed keywords

CRYSTALLINE QUALITY; ELECTRON BACK-SCATTERED DIFFRACTION; ETCH-BACK TECHNIQUE; GRAPHENE TRANSISTORS; GRAPHENES; HIGH QUALITY; HIGH YIELD; INSULATING SUBSTRATES; INSULATOR SUBSTRATES; MASS PRODUCTION; SCALABLE SYNTHESIS; SELF-ALIGNED GATE; SINGLE LAYER; TRANSFER;

FIELD EFFECT TRANSISTORS; GRAPHENE; SUBSTRATES; WAFER BONDING;

CHEMICAL VAPOR DEPOSITION;

EID: 78649981795     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2076337     Document Type: Article

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