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Volumn 45, Issue 29, 2012, Pages

Improved memory behaviour of single-walled carbon nanotubes charge storage nodes

(11) Alba Martin, Maria a,e Firmager, Timothy a Atherton, Joseph a Rosamond, Mark C a Ashall, Daniel b Ghaferi, Amal Al c Ayesh, Ahmad d Gallant, Andrew J a Mabrook, Mohammed F b Petty, Michael C a Zeze, Dagou A a

a DURHAM UNIVERSITY (United Kingdom)

b BANGOR UNIVERSITY (United Kingdom)

c KHALIFA UNIVERSITY (United Arab Emirates)

d UNITED ARAB EMIRATES UNIVERSITY (United Arab Emirates)

e UNIVERSITAT ROVIRA I VIRGILI (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CHARGE LEAKAGE; CHARGE RETENTION; CHARGE STORAGE; FAST SWITCHING; FLOATING GATES; LAYER BY LAYER DEPOSITION; LOCALIZED DEFECTS; MEMORY WINDOW; METAL INSULATORS; PLASTIC ELECTRONICS; POLYETHYLENEIMINE; SEMICONDUCTOR STRUCTURE; SODIUM DODECYL SULFATE; VOLTAGE RANGES;

MIS DEVICES; SODIUM; SODIUM SULFATE;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 84863504976 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/29/295401 Document Type: Article

Times cited : (20)

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