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Volumn 95, Issue 2, 2009, Pages

Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; FLAT-BAND VOLTAGE SHIFT; NONVOLATILE MEMORY DEVICES; SI DEVICES; SI(1 0 0); TRANSMISSION ELECTRON MICROSCOPY IMAGES; TRANSPORT MECHANISM;

EID: 67650770299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3174913     Document Type: Article
Times cited : (23)

References (24)
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    • L. P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 0003-6951 80, 2997 (2002). 10.1063/1.1473234
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    • Ma, L.P.1    Liu, J.2    Yang, Y.3
  • 12
    • 1842424755 scopus 로고    scopus 로고
    • 0036-8075,. 10.1126/science.1095520
    • J. C. Scott, Science 0036-8075 304, 62 (2004). 10.1126/science.1095520
    • (2004) Science , vol.304 , pp. 62
    • Scott, J.C.1
  • 19
    • 0035957717 scopus 로고    scopus 로고
    • 0036-8075,. 10.1126/science.1058782
    • P. G. Collins, M. S. Arnold, and P. Avouris, Science 0036-8075 292, 706 (2001). 10.1126/science.1058782
    • (2001) Science , vol.292 , pp. 706
    • Collins, P.G.1    Arnold, M.S.2    Avouris, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.