Band structure and quantum confined stark effect in InN/GaN superlattices

Crystal Growth and Design

Volumn 12, Issue 7, 2012, Pages 3521-3525

  Gorczyca, I ^a   Suski, T ^a   Christensen, N E ^b   Svane, A ^b  

^a POLISH ACADEMY OF SCIENCES   (Poland)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; BAND STRUCTURE CALCULATION; BAND-GAP TUNING; BARRIER THICKNESS; BUILT-IN ELECTRIC FIELDS; CONDUCTION-BAND PROFILE; EFFECTIVE BAND GAP; EMISSION ENERGIES; IN-BAND; INGAN ALLOY; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL SYSTEMS; SATURATION VALUES; SEMI-EMPIRICAL; SINGLE LAYER; WIDE SPECTRAL RANGE; WURTZITES;

ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

METALLIC SUPERLATTICES;

EID: 84863495866     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg300315r     Document Type: Article

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