Influence of high temperature processing of sol-gel derived barium titanate thin films deposited on platinum and strontium ruthenate coated silicon wafers

Thin Solid Films

Volumn 520, Issue 13, 2012, Pages 4394-4401

  Stawski, Tomasz M ^a   Vijselaar, Wouter J C ^a   Göbel, Ole F ^a,b   Veldhuis, Sjoerd A ^a   Smith, Brian F ^a   Blank, Dave H A ^a   Ten Elshof, Johan E ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b BRUKER DALTONIK GMBH   (Germany)

Author keywords

BaTiO 3; Dielectric properties; Films; Interfaces; Sol gel processes; SrRuO 3

Indexed keywords

AMORPHOUS LAYER; BARIUM TITANATE THIN FILMS; BATIO; DENSE COLUMNAR MICROSTRUCTURE; DIELECTRIC AND FERROELECTRIC PROPERTIES; HIGH-TEMPERATURE PROCESSING; PLATINIZED SILICON WAFERS; PROCESSING CONDITION; SI WAFER; SILICATE FORMATION; SILICATE LAYERS; SRRUO 3; STRONTIUM RUTHENATES;

AMORPHOUS FILMS; BARIUM; BARIUM TITANATE; CARBOXYLATION; DIELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRICITY; FILMS; INTERFACES (MATERIALS); PLATINUM; SILICATES; SILICIDES; SILICON; SOL-GEL PROCESS; STRONTIUM; STRONTIUM TITANATES; THIN FILMS; VAPOR DEPOSITION; ZIRCONIUM ALLOYS;

SILICON WAFERS;

EID: 84863421490     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.029     Document Type: Article

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