High performance of ultralow temperature polycrystalline silicon thin film transistor on plastic substrate

Solid-State Electronics

Volumn 75, Issue , 2012, Pages 97-101

  Park, Dong Jin ^a   Kim, Yong Hae ^b   Park, Byung Ok ^a  

^a Kyungpook National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

AMOLED; Flexible display; Poly silicon; SLS

Indexed keywords

AM-OLED; DOPANT ACTIVATION; FIELD-EFFECT MOBILITIES; HIGH QUALITY; INTERFACE LAYER; LARGE-GRAIN; METAL OXIDE SEMICONDUCTOR; N-CHANNEL; PLASMA OXIDATION; PLASTIC SUBSTRATES; POLY-SI FILMS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; SEQUENTIAL LATERAL SOLIDIFICATIONS; SLS; SUBTHRESHOLD SWING; ULTRA LOW TEMPERATURES;

DIELECTRIC DEVICES; DIELECTRIC FILMS; DISPLAY DEVICES; FIELD EFFECT TRANSISTORS; FLEXIBLE DISPLAYS; GATE DIELECTRICS; MOS DEVICES; POLYSILICON; SILICON OXIDES; SUBSTRATES; THIN FILM TRANSISTORS;

INTERFACES (MATERIALS);

EID: 84863305060     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.028     Document Type: Article

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