Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

Journal of Applied Physics

Volumn 111, Issue 11, 2012, Pages

  Grodecki, K ^a,b   Blaszczyk, J A ^a,c   Strupinski, W ^b   Wysmolek, A ^a   Stepniewski, R ^a   Drabinska, A ^a   Sochacki, M ^c   Dominiak, A ^c   Baranowski, J M ^a,b  

^a UNIVERSITY OF WARSAW   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE TECHNOLOGIES; CVD METHOD; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; GRAPHENE LAYERS; GROWTH MECHANISMS; HIGH QUALITY; RAMAN SHIFT; SIC SUBSTRATES; TEMPERATURE-INDUCED; THERMAL SHIFT; TOP-DOWN PROCESS;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDE; SUBLIMATION; SUBSTRATES;

GRAPHENE;

EID: 84863304503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721673     Document Type: Conference Paper

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