Growth of graphene layers on silicon carbide

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 199-202

  Strupinski, W ^a   Bozek, R ^b   Borysiuk, J ^a   Kosciewicz, K ^a   Wysmolek, A ^b   Stepniewski, R ^b   Baranowski, J M ^b  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

CVD; Epitaxy; Graphene; STM; TEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC SCALE STRUCTURES; CHEMICAL VAPOR DEPOSITIONS (CVD); DECOMPOSITION TEMPERATURE; GRAPHENE LAYERS; HOT-WALL REACTORS; PROCESS PARAMETERS; SCATTERING METHODS; SYSTEMATIC STUDY;

GRAPHENE;

EID: 72949115300     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.199     Document Type: Conference Paper

References (6)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang et al.: Science Vol. 306 (2004), p. 666 doi:10.1126/science.1102896 PMid:15499015. (Pubitemid 39440910)
2. A. J. Van Bommel et al.: Surf. Sci. Vol. 48 (1975), p. 463 doi:10.1016/0039-6028(75)90419-7.
3. C. Berger, Z. Song, T. Li, X. Li, A. Y. Ogbazgi, R. Feng et al.: J. Phys. Chem B (2004).
4. Y. Q. Wu, P. Ye, M. A. Capano, Y. Xuan et al.: Appl. Phys. Letters Vol. 92 (2008), p. 092102 doi:10.1063/1.2889959. (Pubitemid 351357382)
5. P. Lauffer, K. V. Emtsev, R. Graupner, T. Seyller et al.: Phys. Rev. B Vol. 77 (2008), p. 155426 doi:10.1103/PhysRevB.77.155426.
6. Z. H. Ni, W. Chen, X. F. Fan, J.L. Kuo, T. Yu et al.: Phys. Rev. B Vol. 77 (2008), p. 115416 doi:10.1103/PhysRevB.77.115416.