HfO 2 dielectrics engineering using low power SF 6 plasma on InP and In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

  Wang, Yanzhen ^a   Chen, Yen Ting ^a   Xue, Fei ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; DEVICE CHARACTERISTICS; DRIVE CURRENTS; GATE OXIDE; INP; LOW POWER; METAL OXIDE SEMICONDUCTOR; PLASMA TREATMENT;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FLUORINE; GALLIUM; MOS DEVICES; PLASMA APPLICATIONS; SULFUR HEXAFLUORIDE;

HAFNIUM OXIDES;

EID: 84863301084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729606     Document Type: Article

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