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Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer

(7) Meng, Lan a Zhang, Yanfeng b Yan, Wei a Feng, Lei a He, Lin a Dou, Rui Fen a Nie, Jia Cai a

a BEIJING NORMAL UNIVERSITY (China)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DIRAC POINT; ELECTRON-DOPING; NANOSCALED DEFECTS; SCANNING TUNNELING SPECTROSCOPY; SIC SUBSTRATES; SINGLE LAYER; TIME-SCALES; TWIST ANGLES;

CARRIER CONCENTRATION; FERMI LEVEL; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 84863268305 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3691952 Document Type: Article

Times cited : (23)

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