Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 477-480

  Bai, J ^a   Wang, Q ^a   Wang, T ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

dry etching; electroluminescence; InGaN; LEDs; nanorod

Indexed keywords

DEVICE FABRICATIONS; EMISSION ENHANCEMENT; ENHANCED EMISSION; ENHANCED PERFORMANCE; EPIWAFERS; FORWARD BIAS VOLTAGE; III-NITRIDE; INGAN; INGAN/GAN; INJECTION CURRENTS; IV CHARACTERISTICS; LEDS; NANO-MASK; SELF-ORGANISED;

BIAS VOLTAGE; ELECTROLUMINESCENCE; ETCHING; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; NANORODS; NITRIDES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84863229637     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100456     Document Type: Article

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