Efficiency enhancement of GaAs photovoltaics due to Sol-Gel derived anti-reflective AZO films

Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

  Su, Bo Yuan ^a   Chu, Sheng Yuan ^a   Juang, Yung Der ^b   Lin, Mei Chun ^b   Chang, Chia Chiang ^c   Wu, Chin Jyi ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; ALUMINUM NITRATE; ANTI REFLECTIVE COATINGS; ANTI-REFLECTIVE LAYERS; AZO FILMS; CURRENT-VOLTAGE MEASUREMENTS; DEGRADATION TEST; DOPED ZNO; EFFICIENCY ENHANCEMENT; EXTERNAL QUANTUM EFFICIENCY; GAAS; GAAS SOLAR CELLS; IRRADIATION TREATMENT; J-V CHARACTERISTICS; LIGHT GATHERING CAPABILITY; PHOTOVOLTAICS; ZINC ACETATE DIHYDRATE; ZNO;

ALUMINUM; CONVERSION EFFICIENCY; DOPING (ADDITIVES); FILM PREPARATION; GALLIUM ARSENIDE; OPTICAL FILMS; PROTON IRRADIATION; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM; SOL-GEL PROCESS; SOL-GELS; ZINC COMPOUNDS; ZINC OXIDE;

REFLECTIVE COATINGS;

EID: 84863182497     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.062203jes     Document Type: Article

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