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Volumn 100, Issue 3, 2012, Pages

Probing transconductance spatial variations in graphene nanoribbon field-effect transistors using scanning gate microscopy

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; DEVICE CHARACTERISTICS; GRAPHENE NANO-RIBBON; NANO-METER-SCALE; SCANNING GATE MICROSCOPY; SPATIAL IN-HOMOGENEITY; SPATIAL VARIATIONS;

EID: 84863016333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678034     Document Type: Article
Times cited : (22)

References (28)
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    • To avoid charging effects, the back-gate voltage was kept within 20 V
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.