Feature profile evolution during etching of SiO 2 in radio-frequency or direct-current plasmas

Plasma Science and Technology

Volumn 14, Issue 1, 2012, Pages 64-70

  Zhao, Zhanqiang ^a   Dai, Zhongling ^a   Wang, Younian ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

etching yield; profile evolution; reflection; RF bias

Indexed keywords

CHARGE ACCUMULATION; DIRECT-CURRENT; ION ANGULAR DISTRIBUTION; ION TRAJECTORIES; MICRO-TRENCHING; PATTERN PROFILE; PHYSICAL SPUTTERING; PLASMA CONDITIONS; POSITIVE CHARGES; PROFILE EVOLUTION; RADIO FREQUENCIES; RF BIAS;

ANGULAR DISTRIBUTION; ELECTRIC FIELD EFFECTS; IONS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACES;

SILICON COMPOUNDS;

EID: 84863011236     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/14/1/14     Document Type: Article

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