Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature

IEEE Journal of Quantum Electronics

Volumn 48, Issue 9, 2012, Pages 1107-1112

  Onishi, Toshikazu ^a   Imafuji, Osamu ^a   Nagamatsu, Kentaro ^a   Kawaguchi, Masao ^a   Yamanaka, Kazuhiko ^a   Takigawa, Shinichi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Distributed Bragg reflectors (DBRs); GaN; semiconductor lasers; vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

CAVITY LENGTH; CONTINUOUS WAVE LASING; CONTINUOUS WAVE OPERATION; CURRENT INJECTIONS; DBR; GAN; HIGH REFLECTIVITY; LASING MODES; MODE OPERATION; MODE SPACING; MULTIMODE LASING; REFRACTIVE INDEX DISPERSION; ROOM TEMPERATURE; SHORT CAVITY; VERTICAL-CAVITY SURFACE EMITTING LASER; WIDE STOP BAND;

DISTRIBUTED BRAGG REFLECTORS; GALLIUM NITRIDE; LASER PULSES; REFRACTIVE INDEX; SEMICONDUCTOR LASERS;

SURFACE EMITTING LASERS;

EID: 84863003361     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2203586     Document Type: Article

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