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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE REGIONS;
ALGAN;
BAND GAP RENORMALIZATION;
BAND OFFSETS;
BARRIER MATERIAL;
BLUE SHIFT;
CONSTANT-EMISSIONS;
CURRENT RANGE;
DRIVE CURRENTS;
EMISSION CHARACTERISTICS;
EMISSION WAVELENGTH;
HETEROSTRUCTURES;
HOLE WAVE FUNCTIONS;
INALGAN;
INDIUM CONTENT;
INGAN QUANTUM WELLS;
LATTICE-MATCHED;
LIGHT OUTPUT POWER;
MULTI QUANTUM WELLS;
POLARIZATION FIELD;
QUANTUM CONFINED STARK EFFECT;
QUANTUM WELL;
QUATERNARY BARRIERS;
SPECTRAL RANGE;
ULTRA-VIOLET;
DEFECT DENSITY;
DIODES;
GALLIUM NITRIDE;
INDIUM;
LIGHT EMISSION;
SEMICONDUCTOR QUANTUM WELLS;
SPECTROSCOPY;
TELECOMMUNICATION REPEATERS;
LIGHT EMITTING DIODES;
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EID: 77749243748
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880895 Document Type: Article |
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Times cited : (9)
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References (7)
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