-
1
-
-
31544462343
-
III-nitride UV devices
-
DOI 10.1143/JJAP.44.7191
-
M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 44, 7191 (2005). 10.1143/JJAP.44.7191 (Pubitemid 43160500)
-
(2005)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.44
, Issue.10
, pp. 7191-7206
-
-
Khan, M.A.1
Shatalov, M.2
Maruska, H.P.3
Wang, H.M.4
Kuokstis, E.5
-
2
-
-
34548013533
-
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
-
DOI 10.1063/1.2770662
-
H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, Appl. Phys. Lett. APPLAB 0003-6951 91, 071901 (2007). 10.1063/1.2770662 (Pubitemid 47283534)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.7
, pp. 071901
-
-
Hirayama, H.1
Yatabe, T.2
Noguchi, N.3
Ohashi, T.4
Kamata, N.5
-
3
-
-
3142776253
-
-
APPLAB 0003-6951,. 10.1063/1.1765208
-
K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 84, 5264 (2004). 10.1063/1.1765208
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 5264
-
-
Nam, K.B.1
Li, J.2
Nakarmi, M.L.3
Lin, J.Y.4
Jiang, H.X.5
-
4
-
-
33747831672
-
Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
-
DOI 10.1063/1.2338543
-
H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, and T. Nukui, Appl. Phys. Lett. APPLAB 0003-6951 89, 081121 (2006). 10.1063/1.2338543 (Pubitemid 44286115)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.8
, pp. 081121
-
-
Kawanishi, H.1
Senuma, M.2
Yamamoto, M.3
Niikura, E.4
Nukui, T.5
-
5
-
-
34547266333
-
Radiation and polarization properties of free-exciton emission from AlN (0001) surface
-
DOI 10.1063/1.2752727
-
Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. APPLAB 0003-6951 90, 261911 (2007). 10.1063/1.2752727 (Pubitemid 47141097)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.26
, pp. 261911
-
-
Taniyasu, Y.1
Kasu, M.2
Makimoto, T.3
-
6
-
-
63349104616
-
-
ZZZZZZ 1610-1634,. 10.1002/pssc.200778740
-
A. A. Yamaguchi, Phys. Status Solidi C ZZZZZZ 1610-1634 5, 2364 (2008). 10.1002/pssc.200778740
-
(2008)
Phys. Status Solidi C
, vol.5
, pp. 2364
-
-
Yamaguchi, A.A.1
-
7
-
-
57049175148
-
-
APECE4 1882-0778,. 10.1143/APEX.1.051101
-
H. Hirayama, N. Noguchi, T. Yatabe, and N. Kamata, Appl. Phys. Express APECE4 1882-0778 1, 051101 (2008). 10.1143/APEX.1.051101
-
(2008)
Appl. Phys. Express
, vol.1
, pp. 051101
-
-
Hirayama, H.1
Noguchi, N.2
Yatabe, T.3
Kamata, N.4
-
8
-
-
65349176440
-
-
PRBMDO 0163-1829, (R). 10.1103/PhysRevB.79.121308
-
R. G. Banal, M. Funato, and Y. Kawakami, Phys. Rev. B PRBMDO 0163-1829 79, 121308 (R) (2009). 10.1103/PhysRevB.79.121308
-
(2009)
Phys. Rev. B
, vol.79
, pp. 121308
-
-
Banal, R.G.1
Funato, M.2
Kawakami, Y.3
-
9
-
-
0000070839
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.54.2491
-
S. L. Chuang and C. S. Chang, Phys. Rev. B PRBMDO 0163-1829 54, 2491 (1996). 10.1103/PhysRevB.54.2491
-
(1996)
Phys. Rev. B
, vol.54
, pp. 2491
-
-
Chuang, S.L.1
Chang, C.S.2
-
10
-
-
0001216097
-
-
JAPIAU 0021-8979,. 10.1063/1.367217
-
A. A. Yamaguchi, Y. Mochizuki, H. Sunakawa, and A. Usui, J. Appl. Phys. JAPIAU 0021-8979 83, 4542 (1998). 10.1063/1.367217
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 4542
-
-
Yamaguchi, A.A.1
Mochizuki, Y.2
Sunakawa, H.3
Usui, A.4
-
11
-
-
0001345272
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.52.8132
-
M. Suzuki and T. Uenoyama, Phys. Rev. B PRBMDO 0163-1829 52, 8132 (1995). 10.1103/PhysRevB.52.8132
-
(1995)
Phys. Rev. B
, vol.52
, pp. 8132
-
-
Suzuki, M.1
Uenoyama, T.2
-
12
-
-
0031191968
-
-
APPLAB 0003-6951,. 10.1063/1.119541
-
A. A. Yamaguchi, Y. Mochizuki, C. Sasaoka, A. Kimura, M. Nido, and A. Usui, Appl. Phys. Lett. APPLAB 0003-6951 71, 374 (1997). 10.1063/1.119541
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 374
-
-
Yamaguchi, A.A.1
Mochizuki, Y.2
Sasaoka, C.3
Kimura, A.4
Nido, M.5
Usui, A.6
-
13
-
-
0141990606
-
-
JAPIAU 0021-8979,. 10.1063/1.1600519
-
I. Vurgaftman and J. Meyer, J. Appl. Phys. JAPIAU 0021-8979 94, 3675 (2003). 10.1063/1.1600519
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 3675
-
-
Vurgaftman, I.1
Meyer, J.2
-
14
-
-
0001714294
-
-
JAPIAU 0021-8979,. 10.1063/1.361236
-
A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. JAPIAU 0021-8979 79, 3343 (1996). 10.1063/1.361236
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 3343
-
-
Polian, A.1
Grimsditch, M.2
Grzegory, I.3
-
15
-
-
33746833562
-
Strain-induced polarization in wurtzite III-nitride semipolar layers
-
DOI 10.1063/1.2218385
-
A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 100, 023522 (2006). 10.1063/1.2218385 (Pubitemid 44179534)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.2
, pp. 023522
-
-
Romanov, A.E.1
Baker, T.J.2
Nakamura, S.3
Speck, J.S.4
-
16
-
-
34648836073
-
Anisotropie optical matrix elements in strained GaN quantum wells on semipolar and nonpolar substrates
-
DOI 10.1143/JJAP.46.L789
-
A. A. Yamaguchi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 46, L789 (2007). 10.1143/JJAP.46.L789 (Pubitemid 47463483)
-
(2007)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.46
, Issue.33-35
-
-
Yamaguchi, A.A.1
-
17
-
-
70350576268
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.80.115320
-
W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, B. Witzigmann, and A. Hangleiter, Phys. Rev. B PRBMDO 0163-1829 80, 115320 (2009). 10.1103/PhysRevB.80.115320
-
(2009)
Phys. Rev. B
, vol.80
, pp. 115320
-
-
Scheibenzuber, W.G.1
Schwarz, U.T.2
Veprek, R.G.3
Witzigmann, B.4
Hangleiter, A.5
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